Transphorm website: https://www.transphormusa.com

Transphorm is a global semiconductor company, leading the GaN Revolution with the highest performance, highest reliability GaN devices for high voltage power conversion applications. To ensure this, Transphorm deploys its unique vertically-integrated business approach that leverages the industry’s most experienced GaN engineering team at every development stage: design, fabrication, device and application support. This approach, backed by one of the industry’s largest IP portfolios with over 1000 patents, has yielded the industry’s only JEDEC- and AEC-Q101-qualified GaN FETs. Transphorm’s innovations are moving power electronics beyond the limitations of silicon to achieve over 99% efficiency, 40% more power density and 20% lower system cost—and here’s how we do it.

Founded in 2007, Transphorm is the market and technology leader in the development of gallium nitride (GaN) products for high-voltage power conversion applications. The Company delivers the highest performance, highest reliability GaN devices while providing best-in-class application design support to a growing customer base. 

The Company’s technology is built on an incomparable IP portfolio of more than 1,000 patents/applications addressing each core area of the GaN process, end to end. The Company also integrates leading-edge R&D platforms with a world-class engineering team comprising 300 plus years of GaN expertise. Transphorm’s technology and team proficiency enable it to create innovations that move beyond silicon’s limitations to eliminate more of today’s energy losses and capture market share. 

Transphorm’s products switch 4x faster than silicon and increase a system’s power density—producing greater efficiency while enabling system size reduction. Further, the Company’s products are especially optimized within a bridgeless totem-pole PFC design, which reduces overall system cost by eliminating need for bridge rectifiers as well as other passive components.